PERTOP high-efficiency solar cell tube PECVD solutions
Core technology
De-filming suppression technology for amorphous silicon during high-temperature crystallization
Low dust process technology
Steady state control technology of electric field impedance system during thin film deposition
Large area uniformity control technology
Technology of preparing ultra-thin silicon oxide by plasma pulse oxidation
"Silicon oxide + in-situ doped amorphous silicon" two-in-one process technology
Relevant description
Jinchen tube PECVD solution realized the preparation of the core material of PERTOP solar cell --- "Silicon oxide + in-situ doped amorphous silicon" , meanwhile, it won great breakthrough on several core technologies, such as suppressing explosion of amorphous silicon, preventing conduction of electric field and realizing the whole process of high-efficiency solar cell , etc.
Plasma Enhanced Chemical Vapor Deposition (PECVD) Technology
Relying on the dissociation of silane in the plasma electric field, the deposition rate is fast and the doping efficiency is high
Directional deposition and slight winding plating guarantee high yield
Low temperature process and less corrosive by-products reduce cost of consumables
